7A 800V N-channel Power MOSFET F7N80 | 100pcs
1 Description
These N-channel enhanced vdmosfets, is obtained by the self-aligned
planar technology which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. Which accords with the
RoHS standard. TO-220F provides insulation voltage rated at 2000V
RMS from all three terminals to external heatsink.
2 Features
- Fast switching
- ESD improved capability
- Low on resistance(Rdson≤1.8Ω)
- Low gate charge(Typ: 33.9nC)
- Low reverse transfer capacitances(Typ: 11.2pF)
- 100% single pulse avalanche energy test
- 100% ΔVDS test
3 Applications
- Used in various power switching circuit for system miniaturization and higher efficiency.
- Power switch circuit of electron ballast and adaptor.



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