7A 650V N-channel Power MOSFET F7N65 | 100pcs
1 Description
These N-channel enhanced vdmosfets, is obtained by the self-aligned
planar technology which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. Which accords with the
RoHS standard. TO-220F provides insulation voltage rated at 2000V
RMS from all three terminals to external heatsink. TO-220F series comply
with UL standards (File ref:E252906).
2 Features
- Fast switching
- ESD improved capability
- Low on resistance(Rdson≤1.4Ω)
- Low gate charge(Typ: 24nC)
- Low reverse transfer capacitances(Typ: 5.5pF)
- 100% single pulse avalanche energy test
- 100% ΔVDS test
3 Applications
- Used in various power switching circuit for system miniaturization and higher efficiency.
- Power switch circuit of electron ballast and adaptor.






Leave a Reply