N-Channel Enhancement Mode Power MOSFET
This N-channel enhancement mode power MOSFET leverages advanced split-gate trench technology to deliver exceptionally low $R_{DS(on)}$ and minimized gate charge performance. Designed to comply fully with the RoHS environmental standard, it ensures highly efficient operation and structural ruggedness in high-frequency switching environments.
Split-Gate Trench
Ultra-Low R_dson
Fast Speed Transient
100% Avalanche EAS Tested
Low Reverse Transfer
100% ΔVDS Verified
| Channel Architecture | N-Channel Enhancement Mode |
| Electrical Performance | Low gate charge ($Q_g$), high avalanche current capability, and minimized dynamic conduction losses |
| Quality Assurance | 100% single pulse avalanche energy ($E_{AS}$) test parameters and 100% $\Delta V_{DS}$ reliability screenings applied |
| Target Applications | Synchronous rectification in SMPS (Switched-Mode Power Supplies), power tools, Uninterruptible Power Supplies (UPS), and industrial motor control blocks |
| Compliance | RoHS Directive compliant infrastructure |



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